7,937 research outputs found
Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))
In a recent Letter, Altshuler and Maslov propose a model which attributes the
anomalous temperature and field dependence of the resistivity of
two-dimensional electron (or hole) systems to the charging and discharging of
traps in the oxide (spacer), rather than to intrinsic behavior of interacting
particles associated with a conductor-insulator transition in two dimensions.
We argue against this model based on existing experimental evidence.Comment: 1 page; submitted to PR
A hydrogenic molecular atmosphere of a neutron star
A model of a hydrogenic content of atmosphere of the isolated neutron star
1E1207.4-5209 is proposed. It is based on the assumption that the main
component in the atmosphere is the exotic molecular ion and that
there exists a magnetic field in the range of G.
Photoionization H_3^{2+} \rar e + 3p and photodissociation H_3^{2+} \rar H +
2p correspond to two absorption features at 0.7 KeV and 1.4 KeV, respectively,
discovered by {\it Chandra} observatory (Sanwal et al, 2002). The model
predicts one more absorption feature at 80-150 eV corresponding to
photodissociation H_3^{2+} \rar H_2^+ + p.Comment: 8 pages, 1 figur
Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System
Magnetoresistance measurements are presented for a strained p-SiGe quantum
well sample where the density is varied through the B=0 metal-insulator
transition. The close relationship between this transition, the high field Hall
insulator transition and the filling factor =3/2 insulating state is
demonstrated.Comment: 6 pages, 4 figures. Submitted to EP2DS XIII conference 199
Superconductivity in correlated disordered two-dimensional electron gas
We calculate the dynamic effective electron-electron interaction potential
for a low density disordered two-dimensional electron gas. The disordered
response function is used to calculate the effective potential where the
scattering rate is taken from typical mobilities from recent experiments. We
investigate the development of an effective attractive pair potential for both
disordered and disorder free systems with correlations determined from existing
numerical simulation data. The effect of disorder and correlations on the
superconducting critical temperature Tc is discussed.Comment: 4 pages, RevTeX + epsf, 4 figure
Classical versus Quantum Effects in the B=0 Conducting Phase in Two Dimensions
In the dilute two-dimensional electron system in silicon, we show that the
temperature below which Shubnikov-de Haas oscillations become apparent is
approximately the same as the temperature below which an exponential decrease
in resistance is seen in B=0, suggesting that the anomalous behavior in zero
field is observed only when the system is in a degenerate (quantum) state. The
temperature dependence of the resistance is found to be qualitatively similar
in B=0 and at integer Landau level filling factors.Comment: 3 pages, 3 figure
Thermodynamic Signature of a Two-Dimensional Metal-Insulator Transition
We present a study of the compressibility, K, of a two-dimensional hole
system which exhibits a metal-insulator phase transition at zero magnetic
field. It has been observed that dK/dp changes sign at the critical density for
the metal-insulator transition. Measurements also indicate that the insulating
phase is incompressible for all values of B. Finally, we show how the phase
transition evolves as the magnetic field is varied and construct a phase
diagram in the density-magnetic field plane for this system.Comment: 4 pages, 4 figures, submitted to Physical Review Letters; version 1
is identical to version 2 but didn't compile properl
Magnetic Field Suppression of the Conducting Phase in Two Dimensions
The anomalous conducting phase that has been shown to exist in zero field in
dilute two-dimensional electron systems in silicon MOSFETs is driven into a
strongly insulating state by a magnetic field of about 20 kOe applied parallel
to the plane. The data suggest that in the limit of T -> 0 the conducting phase
is suppressed by an arbitrarily weak magnetic field. We call attention to
striking similarities to magnetic field-induced superconductor-insulator
transitions
On a complex differential Riccati equation
We consider a nonlinear partial differential equation for complex-valued
functions which is related to the two-dimensional stationary Schrodinger
equation and enjoys many properties similar to those of the ordinary
differential Riccati equation as, e.g., the famous Euler theorems, the Picard
theorem and others. Besides these generalizations of the classical
"one-dimensional" results we discuss new features of the considered equation
like, e.g., an analogue of the Cauchy integral theorem
Magnetic-Field-Driven Superconductor-Insulator-Type Transition in Graphite
A magnetic-field-driven transition from metallic- to semiconducting-type
behavior in the basal-plane resistance takes place in highly oriented pyrolytic
graphite at a field kOe applied along the hexagonal c-axis. The
analysis of the data reveals a striking similarity between this transition and
that measured in thin-film superconductors and Si MOSFET's. However, in
contrast to those materials, the transition in graphite is observable at almost
two orders of magnitude higher temperatures.Comment: 4 Figure
Universal scaling, beta function, and metal-insulator transitions
We demonstrate a universal scaling form of longitudinal resistance in the
quantum critical region of metal-insulator transitions, based on numerical
results of three-dimensional Anderson transitions (with and without magnetic
field), two-dimensional quantum Hall plateau to insulator transition, as well
as experimental data of the recently discovered two-dimensional metal-insulator
transition. The associated reflection symmetry and a peculiar logarithmic form
of the beta function exist over a wide range in which the resistance can change
by more than one order of magnitude. Interesting implications for the
two-dimensional metal-insulator transition are discussed.Comment: 4 pages, REVTEX, 4 embedded figures; minor corrections to figures and
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